MAPI–MoS<sub>2</sub> quantum dot composite films as active layers for efficient photovoltaics

In this work we have incorporated MoS<sub>2</sub> quantum dots having outstanding optoelectronic properties with methyl ammonium lead iodide (MAPI) to form a composite absorber material for photovoltaic applications. The inclusion of MoS<sub>2</sub> quantum dots in the perovskite layer improves the absorption and charge transport properties of the active layer, in part due to the quantum dots contributing to defect passivation at the MAPI grain interfaces. The photocurrent density increases when the MoS<sub>2</sub> quantum dots are introduced in the device structure, resulting in efficiency improvements of 14% and 28% for devices fabricated in different laboratories.

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Publication Details

Journal
Nanoscale Advances
Published
2025-01-01
DOI
https://doi.org/10.1039/d5na00485c
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

MAPI–MoS2 quantum dot composite films as active layers for efficient photovoltaics

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Perovskite Materials and Applications
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MAPI–MoS2 quantum dot composite films as active layers for efficient photovoltaics

Paul Maguire, Vladimír Švrček, Ankur Uttam Kambley, Talitha Ramos Canabarra dos Santos, Subha Sadhu, Slavia Deeksha Dsouza, Pagona Papakonstantinou, Abhijit Ganguly, Davide Mariotti, Dilli Babu Padmanaban
article en

Abstract

In this work we have incorporated MoS<sub>2</sub> quantum dots having outstanding optoelectronic properties with methyl ammonium lead iodide (MAPI) to form a composite absorber material for photovoltaic applications. The inclusion of MoS<sub>2</sub> quantum dots in the perovskite layer improves the absorption and charge transport properties of the active layer, in part due to the quantum dots contributing to defect passivation at the MAPI grain interfaces. The photocurrent density increases when the MoS<sub>2</sub> quantum dots are introduced in the device structure, resulting in efficiency improvements of 14% and 28% for devices fabricated in different laboratories.

Nanoscale AdvancesVol. 7(15)
University of Ulster (GB), University of Strathclyde (GB), Universidade Federal do Paraná (BR), National Institute of Advanced Industrial Science and Technology (JP), University of Glasgow (GB), Banaras Hindu University (IN)
University of Strathclyde, Department for the Economy, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Engineering and Physical Sciences Research Council, Japan Society for the Promotion of Science
Openalex Percentile: Top 87%
Perovskite Materials and Applications
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