Quantitative Analysis of Irradiation-Induced MOSFET Interface Traps Using Subthreshold and C-V Characteristics

Radiation-induced damage in integrated circuits is primarily caused by irradiation effects on MOSFETs and other devices. In MOSFETs, this damage mainly arises from an increase in Si/SiO2 interface traps. However, the methods and techniques for characterizing interface traps in MOSFET devices within integrated circuits are limited. In this study, the interface traps of NMOS and PMOS devices before and after irradiation are studied using the sub-threshold swing method and variable frequency CV method. The difference between the results from these two methods is due to their distinct measurement principles.