Comparative Investigation on TID-Induced Threshold Voltage Shift for 1200V Asymmetric Trench SiC MOSFET by Experiment and Simulation

The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\text{TH}})$</tex> shifts of asymmetric trench SiC MOSFET are −1.56 and −4.53 V for gate biased voltages of 0 and 20 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${V}$</tex>, TIDs of 500 and 150 krad(Si), respectively. The relationships of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\text{TH}})$</tex> shift with trap type, energy level, trap density, and gate voltage are simulated. A simple donor-like trap model with an energy level of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$E\mathrm{c}-0.55$</tex> eV is chosen, the absolute errors are −0.19, 0.24, and − 0.12 V, the relative errors are 8.01%, −5.38%, and 4.17%, for gate biased voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${V}_{\text{GS}}=0$</tex>, 5, and 20 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${V}$</tex>, TID=500, 150, and 150 krad(Si), respectively.