A Comparative Study of Total Ionizing Dose and Heavy-Ion Irradiation Effects on n-Channel and p-Channel SGT MOSFETs
A comparative investigation of the total ionizing dose (TID) effect and single event effect (SEE) in n-channel and p-channel SGT MOSFETs through experiments is presented. The TID results indicate that the degradation of the threshold voltage and breakdown voltage in the n-channel SGT MOSFET is more significant than in the p-channel SGT MOSFET. Moreover, the SEE safe operating area obtained from experiments shows that the SEE threshold voltages of the nchannel and p-channel SGT MOSFETs are 50 V and 70 V when LET = 98 MeV·cm²/mg and |VGS| = 5 V. In summary, the pchannel SGT MOSFET exhibits stronger resistance to both TID and SEE.
Authors
- Feng Yang (ORCID: https://orcid.org/0000-0002-3805-3007)
- Jie Jiang (ORCID: https://orcid.org/0000-0002-9834-6880)
- Xiaozong Huang (ORCID: https://orcid.org/0000-0002-6284-7771)
- Rui Yang (ORCID: https://orcid.org/0000-0003-4405-5882)
- Xiang Fan (ORCID: https://orcid.org/0000-0002-3632-1493)
- Yuan Wang (ORCID: https://orcid.org/0009-0003-8098-9620)
Institutions
- Institute of Semiconductors (CN)
Publication Details
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1109/icreed65908.2025.11036183
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00