Total Dose and Heavy Ion Radiation Response of NAND-Like Spin Orbit Torque Device

In this paper, the total ionizing dose (TID) effects and the heavy-ion effects of NAND-like spin-orbit torque (SOT) devices are evaluated. Experimental results show that these devices are highly radiation tolerant, which have negligible resistance changes and small critical switching voltage changes of about 3% to 4% under 1 Mrad (Si) Cobalt-60 irradiation. The heavy-ion irradiation leads to similar results in the critical switching voltage and can eliminate the multi-state of the devices. These findings suggest that NAND-like SOT devices have potential for use in radiation-hardened applications.