Total Ionizing Dose Effect on Voltage Controlled Ring Oscillator in 65nm CMOS

This work examines total ionizing dose response of the voltage-controlled ring oscillators based on differential delay cells (Lee-Kim, Maneatis) and current-starved inverters (single-end, cross-coupling, feedforward cross-coupling).

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Published
2025-04-16
DOI
https://doi.org/10.1109/icreed65908.2025.11036206
Primary Topic
Radiation Effects in Electronics
Type
article
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article

Total Ionizing Dose Effect on Voltage Controlled Ring Oscillator in 65nm CMOS

Zheyi Li, Paul Leroux, Jinghao Zhao, Qi Guo et al.
Radiation Effects in Electronics
article

Total Ionizing Dose Effect on Voltage Controlled Ring Oscillator in 65nm CMOS

Zheyi Li, Paul Leroux, Jinghao Zhao, Qi Guo, Xuefeng Yu, Jeffrey Prinzie
article en

Abstract

This work examines total ionizing dose response of the voltage-controlled ring oscillators based on differential delay cells (Lee-Kim, Maneatis) and current-starved inverters (single-end, cross-coupling, feedforward cross-coupling).

Chinese Academy of Sciences (CN), Xinjiang Technical Institute of Physics & Chemistry (CN), KU Leuven (BE)
Affordable and clean energy
Openalex Percentile: Top 88%
Radiation Effects in Electronics
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