Proton-Induced Single-Event Upset Characterization in FinFET and FDSOI D-Flip-Flops
Based on radiation test, Single-Event Upset response characterization in FinFET and FDSOI D-Flip-Flops within the proton energy spectrum of 10–300 MeV is revealed. Furthermore, an analytical examination of the observed experimental phenomena is performed, leveraging the principles of proton-induced indirect ionization and the structural attributes of the devices.
Authors
- Tongde Li (ORCID: https://orcid.org/0000-0002-8961-1531)
- Yang Bai (ORCID: https://orcid.org/0000-0002-8171-0914)
- Yongqin Zhu
- Qian Du
- Liang Wang (ORCID: https://orcid.org/0000-0001-5224-8647)
Institutions
- Beijing Microelectronics Technology Institute (CN)
Publication Details
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1109/icreed65908.2025.11036231
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00