2D TCAD Simulation of Transient Dose Rate Effect in 130nm SOI CMOS Inverters

Radiation-hardened CMOS digital circuits are widely used in various fields and are core components of electronic systems. This paper studies the transient dose rate radiation characteristics of inverters based on SOI MOSFETs through two-dimensional TCAD simulations. The results indicate that the accumulation of fixed charges in the oxide has little effect on the I-V characteristics of SOI MOSFETs. The transient dose rate performance of the inverter is then discussed. When the transient dose rate reaches a certain level, the change in V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</inf>(half of the operating voltage) of the inverter remains within 0.05V, and the changes in the voltage transient response characteristic curve are also very limited. These results suggest that inverters based on SOI MOSFETs have great potential in high-reliability digital circuit application.