Bias and LET Dependence of Heavy Ion Induced Degradation in SiC MOSFETs

Radiation-induced single event leakage current (SELC) in SiC nMOSFETs are investigated by Bi ion and Kr ion irradiation. The higher drain bias and higher linear energy transfer (LET) value of heavy ion are proved to lead to more severe leakage degradation. A discontinuous reaction layer near the source contact interface is observed at the damage region, which may be a main contributor for the radiation-induced leakage. The heavy ion-induced transconductance and output current degradations are also reported.