Experimental Study on SEL of a COTS 3D NAND Flash Memory and SEL Protection
In this work, we studied the Single Event Latch-up (SEL) effect of a Commercial Off-The-Shelf (COTS) 3D charge trap NAND Flash memory by using heavy ion accelerator. It is found that the SEL effect of the 3D NAND Flash is very sensitive. Through experimental research, we located the SEL sensitive area is the periphery. We designed a SEL protection circuit which is resistant to radiation, and verified the effectiveness of the SEL protection. This approach allows the use of COTS components in space, reducing costs while providing protection against critical SEL effects without special radiation hardening techniques.
Authors
- Mingxue Huo (ORCID: https://orcid.org/0000-0002-6644-8081)
- Bo Mei (ORCID: https://orcid.org/0000-0002-2298-9660)
- Xuesong Zheng (ORCID: https://orcid.org/0000-0003-3297-7281)
- Chaoming Liu (ORCID: https://orcid.org/0000-0001-8839-5729)
- Liyi Xiao
- Zhichao Wei (ORCID: https://orcid.org/0000-0002-4796-9690)
- Rigen Mo
- Yuhang Wang (ORCID: https://orcid.org/0000-0003-3057-2926)
Institutions
- Harbin Institute of Technology (CN)
- China Aerospace Science and Technology Corporation (CN)
Publication Details
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1109/icreed65908.2025.11036248
- Citations
- 1
- Primary Topic
- Advanced Data Storage Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.49