A Radiation-Hardened Resistive Random Access Memory with High-Reliability Write and Read Scheme
This paper presents a radiation-hardened RRAM memory architecture. By employing self-adjusted voltage-regulated write scheme and variation-tolerant read scheme, in conjunction with high-reliability state management, the radiation tolerance of overall RRAM circuit is enhanced. The fabricated RRAM chip features a read access time of 40ns, SEU threshold> 37MeV·cm2/mg at ECC bypass, SEL threshold> 75MeV·cm2/mg, and TID resistance> 300krad(Si).
Authors
- Tianxing Ren (ORCID: https://orcid.org/0009-0004-6461-1692)
- Kexin Yao (ORCID: https://orcid.org/0000-0002-5686-6909)
- Chenglong Sui
- Yuanfu Zhao (ORCID: https://orcid.org/0000-0002-6786-6293)
- Xupeng Han
- Wang Bi
- Yajiao Liu (ORCID: https://orcid.org/0000-0002-7756-2955)
- Liang Wang (ORCID: https://orcid.org/0000-0002-0061-5502)
- Anni Cao (ORCID: https://orcid.org/0000-0002-2252-9103)
- Weiyi Cao
Institutions
- Harbin Institute of Technology (CN)
- Beijing Microelectronics Technology Institute (CN)
- Beihang University (CN)
Publication Details
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1109/icreed65908.2025.11036191
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00