A Single-Event Hardened SiC MOSFET Based on Localized Carrier Lifetime Control Region
This paper explores the effect of reducing the carrier lifetime in the epilayer on the temperature and gate oxide electric field during a single-event strike in SiC MOSFETs. To mitigate the impact on electrical characteristics, an innovative hardened structure with a split-gate and three localized carrier lifetime control regions (LCLCRs) is introduced.
Authors
- Yun Bai (ORCID: https://orcid.org/0000-0003-3104-1393)
- Yan Chen (ORCID: https://orcid.org/0000-0001-6193-7508)
- Xinyu Liu (ORCID: https://orcid.org/0000-0002-2512-8110)
- Leshan Qiu (ORCID: https://orcid.org/0009-0001-9582-9713)
- Jieqin Ding
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1109/icreed65908.2025.11036244
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00