Study on Dose Response of 300 nm Gate Oxide Process PMOS

In order to explore the key performance indexes of P-channel Metal Oxide Semiconductor(PMOS) dosimeter, the total dose irradiation test of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$60\text{Co}-\gamma$</tex> ray and the annealing test at room temperature and high temperature of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$100^{\circ}\mathrm{C}$</tex> on 300 nm-PMOS dosimeter are carried out. The experimental results show that the device exhibits a significant negative threshold voltage shift after irradiation, and annealing can effectively restore the electrical characteristics of the device. Compared with the 400 nm device, the 300 nm device exhibits higher linearity and sensitivity. This study provides an important experimental basis for the application of PMOS in radiation environments.