Angular Sensitivity of Heavy-Ion-Induced Single-Event Transient Pulse Widths for Bulk FinFET Technology
Based on heavy-ion test, SET response in FinFET inverters is characterized under varying incident angles and driving capabilities. Through simulation, the mechanisms of charge collection and ionization trajectories within FinFET devices at different incidence locations and angles are elucidated. These results support radiation effects assessment in advanced technology nodes.
Authors
- Tongde Li (ORCID: https://orcid.org/0000-0002-8961-1531)
- Jingshuang Yuan
- Yang Bai (ORCID: https://orcid.org/0000-0002-8171-0914)
- Liang Wang (ORCID: https://orcid.org/0000-0003-2246-9443)
- Yu Sun
- Yongqin Zhu
Institutions
- Beijing Microelectronics Technology Institute (CN)
Publication Details
- Published
- 2025-04-16
- DOI
- https://doi.org/10.1109/icreed65908.2025.11036187
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00