The Radiation Susceptibility of FRAM Induced by Pulsed γ-Ray and Reactor Neutron

Pulsed γ-ray and neutron radiation experiments of a commercial ferroelectric memory were carried out on “QiangGuang-I” accelerator and Xi'an pulse reactor respectively to study the damage sensitivity of ferroelectric memory under two radiation environments. In the pulsed γ-ray radiation environment, the ferroelectric memory under different test states has good resistance to pulsed γ-ray and there was no readout error during experiment process. In the neutron radiation environment, there are two types of readout errors in ferroelectric memory. The first type of readout error is recoverable when reenergizes the ferroelectric memory. And the second type of readout error is unrecoverable when reenergizes the ferroelectric memory. Based on the internal structure and operation mode of ferroelectric memory, the first type of readout error is due to the voltage of readout signal shift of bit line which is caused by the incidence of neutron and make the sensitive amplifier cannot distinguish the right data. And the second type of readout error is due to the reversal of polarization direction of the ferroelectric capacitance which is caused by the transient current of neutron incidence that change the storage data of ferroelectric memory. Combined with TCAD simulation, the difference of damage sensitivity is analyzed.