New Observations on Carrier Transport and Thermal Behavior in IGBT During Heavy-ion Radiation

In this paper, sophisticated TCAD simulations are done to understand the basic carrier transport and thermal behavior in trench-gate IGBT during atmospheric neutron radiation. Current commutation and hot-spot transfer between adjacent cell during radiation is observed for the first time. Further investigation infers that increasing lattice temperature decreases current gain of parasitic transistors along transient current path and gradually make the transient current commutes to adjacent cell with higher gain. This recycling process tends to make the current and temperature balanced between adjacent cells, which provides new insight to design radiation-harden power devices.