Research on the Reliability of GaN-Based Power Electronic Devices for Space Applications

Gallium Nitride (GaN)-based power electronic devices have remarkable advantages over silicon (Si) devices in high-voltage, high-frequency, high-temperature, and radiation environments. However, reliability issues such as performance degradation and failure in extreme environments remain critical challenges for their space applications. This article analyzes the drift effects of GaN devices, including dynamic on-resistance and threshold voltage drift, and discusses radiation damage mechanisms, anti-radiation hardening techniques, and evaluation methods. The study aims to provide insights for enhancing the reliability of GaN devices in space power systems.