Low temperature growth (001) facet-oriented p-type FAPbI<sub>3</sub> perovskite solar cells

Various atomic arrangements and coordination of facets significantly influence the photoelectric properties of perovskites. When preparing FAPbI<sub>3</sub> with a (001) crystal facet, the presence of other crystal facets such as (011) or (111) can adversely affect the carrier extraction efficiency and device stability. In this study, the desired (001) orientations of FAPbI<sub>3</sub> are greatly promoted without the presence of other crystal planes attributed to the formation of 2D PEA<sub>2</sub>FA<sub><i>n</i>-1</sub>Pb<sub><i>n</i></sub>I<sub>3<i>n</i>+1</sub>. This enhancement in the crystallographic orientation of FAPbI<sub>3</sub> concurrently enabled a transition in its conductivity type from n-type to p-type. Furthermore, our DFT results revealed that the holes in the (001) facet exhibit superior carrier transport properties in FA-based perovskites. As a result, the devices show a power conversion efficiency of 23.02% with a <i>V</i><sub>oc</sub> of 1.19 V.

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Publication Details

Journal
Chemical Communications
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cc02184g
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.73

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article

Low temperature growth (001) facet-oriented p-type FAPbI3 perovskite solar cells

Xing‐Tao An, Yingke Ren, Junlei Tao, Cuina Gao et al.
1 citations
Chemical Communications
Perovskite Materials and Applications
0.73
article

Low temperature growth (001) facet-oriented p-type FAPbI3 perovskite solar cells

Xing‐Tao An, Yingke Ren, Junlei Tao, Cuina Gao, Zhi Li, Chao He, Xiaofei Yin, Jing Chen
article en
1 citations

Abstract

Various atomic arrangements and coordination of facets significantly influence the photoelectric properties of perovskites. When preparing FAPbI<sub>3</sub> with a (001) crystal facet, the presence of other crystal facets such as (011) or (111) can adversely affect the carrier extraction efficiency and device stability. In this study, the desired (001) orientations of FAPbI<sub>3</sub> are greatly promoted without the presence of other crystal planes attributed to the formation of 2D PEA<sub>2</sub>FA<sub><i>n</i>-1</sub>Pb<sub><i>n</i></sub>I<sub>3<i>n</i>+1</sub>. This enhancement in the crystallographic orientation of FAPbI<sub>3</sub> concurrently enabled a transition in its conductivity type from n-type to p-type. Furthermore, our DFT results revealed that the holes in the (001) facet exhibit superior carrier transport properties in FA-based perovskites. As a result, the devices show a power conversion efficiency of 23.02% with a <i>V</i><sub>oc</sub> of 1.19 V.

Chemical CommunicationsVol. 61(61)
Hebei University of Science and Technology (CN)
Hebei Province Outstanding Youth Fund
Affordable and clean energy
Openalex Percentile: Top 27%
Perovskite Materials and Applications
0.73
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