Gate-Tunable Band Edge in Few-Layer MoS<sub>2</sub>

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the <i>K</i> points, whereas in multilayers, they shift to the <i>Q</i> points, midway between the Γ and <i>K</i> points. In this study, we conduct magnetotransport experiments to measure the occupation in the <i>Q</i> and <i>K</i> valleys in four-layer molybdenum disulfide (MoS<sub>2</sub>). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid <i>k</i>·<i>p</i> tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS<sub>2</sub>, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.

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Publication Details

Journal
Nano Letters
Published
2025-06-22
DOI
https://doi.org/10.1021/acs.nanolett.5c01998
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.52

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article

Gate-Tunable Band Edge in Few-Layer MoS2

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2D Materials and Applications
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article

Gate-Tunable Band Edge in Few-Layer MoS2

Isaac Soltero, Vladimir I. Fal’ko, Takashi Taniguchi, Kenji Watanabe, James G. McHugh, Thomas Ihn, Alexander Schmidhuber, Michele Masseroni, K. Ensslin, I. V. Rozhansky, Markus Niese, Xue Li
article en
1 citations

Abstract

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the <i>K</i> points, whereas in multilayers, they shift to the <i>Q</i> points, midway between the Γ and <i>K</i> points. In this study, we conduct magnetotransport experiments to measure the occupation in the <i>Q</i> and <i>K</i> valleys in four-layer molybdenum disulfide (MoS<sub>2</sub>). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid <i>k</i>·<i>p</i> tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS<sub>2</sub>, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.

Nano LettersVol. 25(26)
Solid State Physics Laboratory (IN), National Institute for Materials Science (JP), University of Manchester (GB), Henry Royce Institute (GB), ETH Zurich (CH), Quantum (Australia) (AU)
Lloyd's Register Foundation, Graphene Flagship, Leverhulme Trust, University of Manchester, Ministry of Education, Culture, Sports, Science and Technology, Eidgenössische Technische Hochschule Zürich, Engineering and Physical Sciences Research Council, Japan Society for the Promotion of Science, National Center of Competence in Research Quantum Science and Technology, Core Research for Evolutional Science and Technology, H2020 European Research Council
Openalex Percentile: Top 37%
2D Materials and Applications
0.52
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