Experimental study of a determinative chaos generator based on a transistor structure

The work presents an experimental study of a new circuit solution for a deterministic chaos generator based on a bipolar transistor structure with negative differential resistance. This chaos generator system has three dynamic variables: the voltage on the equivalent capacitance of the transistor structure between the collectors of the first and second bipolar transistors, and the third is the current flowing through the inductance of the oscillatory circuit. The dynamic processes of deterministic chaos are determined by the reactive properties of the transistor structure with negative differential resistance. Experimental studies were conducted from low frequencies to microwave frequencies to determine the optimal operating frequencies for various tasks of using the developed device. The I-V characteristic, the Smith chart of the S11 parameter, the S11 impedance, the active and reactive components of the impedance, the equivalent capacitance and inductance, and the SWR of the chaos generator based on two bipolar transistors in the frequency range from 15 kHz to 1 GHz were obtained. And also experimental oscillograms of the developed chaos generator were obtained. In comparison with analogues, the proposed and investigated deterministic chaos generator has improved loading capacity and higher speed, has a short time of establishment of stationary oscillations.