A Comparative Study on the Thermoelectric Performance of Layered β- and ε-GaSe
Abstract Due to the weak interlayer interactions, the binary III-VI chalcogenides GaSe can exist in several distinct polymorphs. Among them, the so-called β - and ε -phases simultaneously exhibit favorable total energies and moderate band gaps, which offer a good platform to explore their thermoelectric properties. Here, we demonstrate by first-principles calculations that the two systems have very similar band structures and phonon dispersions, despite different stacking sequences between adjacent layers. Interestingly, the lattice thermal conductivity of ε -GaSe is obviously lower than that of β -GaSe, which is inherently tied to stronger lattice anharmonicity caused by bonding heterogeneity. Besides, both systems exhibit higher p-type power factors due to doubly degenerate bands with weaker dispersions around the valence band maximum. As a consequence, a significantly enhanced p-type figure-of-merit of 2.1 can be realized at 700 K along the out-of-plane direction of the ε -phase.
Authors
- Hui Cao (ORCID: https://orcid.org/0000-0002-1331-5664)
- Yufeng Luo (ORCID: https://orcid.org/0000-0002-5121-8718)
- Hongmei Yuan (ORCID: https://orcid.org/0000-0003-1744-0961)
- Huijun Liu (ORCID: https://orcid.org/0000-0001-5801-7217)
- Shihao Han
- Wenyan Jiao
Institutions
- Wuhan University (CN)
Publication Details
- Journal
- Chinese Physics Letters
- Published
- 2025-06-20
- DOI
- https://doi.org/10.1088/0256-307x/42/8/080603
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73