Performance enhancement of triple material staggered heterojunction double gate MOSFET (TM-SH-DGMOS) with gate engineering

This research paper emerges to focus on the simulation and analysis of Triple Material Staggered Heterojunction Double Gate MOSFET (TM-SH-DG MOSFET), with a particular emphasis on their suitability for RF and mixed-signal SOC applications. This work explores its performance characteristics, particularly in the areas of analog/ RF and linearity using the numerical TCAD device simulator. The study explores the impact of gate length ratios and gate materials on various performance parameters, highlighting the potential advantages of these transistors in specific electronic uses. Because of the ease of manufacture and superior short channel effect performance, in this paper different figure of merits for linearity and RF/analog performance parameters like Transconductance (gm ), Output Resistance (Rout), Cut off frequency (fT ), Maximum frequency of oscillation (fmax), VIP2 (Variable Intercept Point of Second order), 1-dB compression are analysed. The study’s results indicate that TM-SH-DGMOS exhibits promising characteristics, especially in the context of RF performance, when gate ratio variations are considered. This suggests that the device could be competitive in low power application.