Optimization and Design of Silicon PIN Detector Guard Ring Structure

In this study, TCAD Silvaco software is utilized to simulate a silicon-based PIN guard ring detector, focusing on the role of the guard ring in electric field shaping and breakdown suppression. The lateral and vertical structures of the device are optimized by constructing a multi-stage gradient guard ring system. The non-uniform meshing technique and Newton-Raphson iterative algorithm are used to accurately simulate the critical region and solve the coupling problem of the equations, and the I-V curves reveal the characteristics of the device under reverse and forward bias, and the guard ring can effectively reduce the concentration effect of the electric field and avoid the risk of edge breakdown. This paper shows that the guard ring structure improves the detector E-field breakdown resistance and optimizes the edge E-field shaping.