Research on the Application of Novel Perovskite Materials in Wide-Bandgap Power Electronic Devices

Perovskite materials exhibit tremendous potential in the field of power electronic devices due to their wide bandgap characteristics, high carrier mobility, tunable bandgap, and low-temperature solution processability. This paper reviews the structural classifications of perovskite materials (such as ABX-type metal halides and lead-free perovskites) and their electronic and optical properties (including high breakdown field strength and low defect density). It further discusses recent advances in their applications in power devices, including MOSFETs, HEMTs, Schottky diodes, and PN junction rectifiers. Studies indicate that device performance can be significantly enhanced through compositional optimization, interface engineering, and defect passivation; however, challenges related to stability and toxicity remain. Looking ahead, the development of lead-free perovskites and heterojunction design will be key research focuses to advance the practical application of perovskites in efficient and low-cost power electronic devices.