Analysis of 6T, 7T, 8T SRAM Cells Using FinFET at 7nm Technology

Fin Field-Effect Transistor (FinFET) architecture becomes popular in order to develop a Static Random-Access Memory (SRAM) cells with high performance as well as low power consumption with the semiconductor advancement. A comprehensive analysis of 6-transistor (6T), 7-transistor (7T), and 8-transistor (8T) SRAM cells, are developed using FinFET technology at the 7nm node, is presented in this research. The approach compares and assesses the performance based on various critical parameters such as read/write delay, power consumption, and leakage currents at nominal as well as varying environmental conditions. FinFET uses its intrinsic advantages of lower leakage and better electrostatic control to overcome the challenges pertaining to stability and power dissipation in nanoscale SRAM designs. It is further demonstrated that the 7T and 8T SRAM cells exhibit superior stability and less interference from read and write noise than 6T using thorough simulation with industry-standard EDA tools. 8T SRAM maintains superior performance over the 6T and 7T in terms of stability, power efficiency and cost by successfully decoupling read and write operations. The results show that cells designed as 7T and 8T are more tolerant than the 6T design regarding manufacturing and environmental variations, and therefore can be considered for advanced low-power and high-speed applications.