Effect of Shock Duration on Si-to-Si Stiction
The study reports that the duration of input shocks plays a crucial role in silicon-to-silicon contact stiction events. Experimental results indicate that the stiction rate significantly increases from 0% to 56% as the shock duration is extended from 2 ms to 6 ms. Additionally, the shock duration is found to be more influential than the shock peak. The contact time dependency of stiction may be attributed to the instantaneous formation of a meniscus between the contact surfaces.
Authors
- C H Wang
- Shih-Wei Lee
Institutions
- Richtek Technology (Taiwan) (TW)
Publication Details
- Published
- 2025-05-04
- DOI
- https://doi.org/10.1109/inertial63280.2025.11036726
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00