Effect of Shock Duration on Si-to-Si Stiction

The study reports that the duration of input shocks plays a crucial role in silicon-to-silicon contact stiction events. Experimental results indicate that the stiction rate significantly increases from 0% to 56% as the shock duration is extended from 2 ms to 6 ms. Additionally, the shock duration is found to be more influential than the shock peak. The contact time dependency of stiction may be attributed to the instantaneous formation of a meniscus between the contact surfaces.

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Publication Details

Published
2025-05-04
DOI
https://doi.org/10.1109/inertial63280.2025.11036726
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
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article
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article

Effect of Shock Duration on Si-to-Si Stiction

C H Wang, Shih-Wei Lee
Integrated Circuits and Semiconductor Failure Analysis
article

Effect of Shock Duration on Si-to-Si Stiction

C H Wang, Shih-Wei Lee
article en

Abstract

The study reports that the duration of input shocks plays a crucial role in silicon-to-silicon contact stiction events. Experimental results indicate that the stiction rate significantly increases from 0% to 56% as the shock duration is extended from 2 ms to 6 ms. Additionally, the shock duration is found to be more influential than the shock peak. The contact time dependency of stiction may be attributed to the instantaneous formation of a meniscus between the contact surfaces.

Richtek Technology (Taiwan) (TW)
Openalex Percentile: Top 88%
Integrated Circuits and Semiconductor Failure Analysis
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Effect of Shock Duration on Si-to-Si Stiction — C H Wang, Shih-Wei Lee · (2025) | TGRS Research Map | TGRS