Analytical Modeling and Simulation Investigation of Nanowire Tunnel FET for Potential and Drain Current Evaluation

An analytical model of nanowire-tunnel field effect transistor (NWTFET) has been developed in this article with a gate-all-around structure and band-to-band tunneling (BTBT) mechanism. The proposed model is effective for operation in all regions such as source, drain, channel and measures accurate potential, transfer characteristics and is immune to short channel effect. The drain current and surface potential have been evaluated with the variation in metal work function, doping concentration, oxide thickness and channel material at different bias conditions (V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> and V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub>). The validation of observed results has been performed through TCAD simulations. The surface potential model is designed by separating the substrate of silicon into three dissimilar areas (I, II, III) and determining the 2-D Poisson's equation (PE) in other areas. To utilize Poisson's Equation appropriately at various boundary conditions, a descriptive parabolic approximation strategy is used.