Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications
The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R2-IG-LVT, R1-IG-Ambi, R3-IG-LVT, and R2-IG-HVT). The electrical connections through two program gates (PG) and one control gate (CG) in 3G-RFET supports the implementation of configurations suitable for low-VTH (R2-IG-LVT and R3-IG-LVT) and high-VTH (R2-IGHVT), phase follower/reversal (R2-IG-LVT), frequency doubler (R1-IGAmbi), high gain (R3-IG-LVT), lower parasitic capacitance (R2-IG-LVT and R3-IG-LVT), and higher linearity (R3-IG-LVT) applications. Results showcase electrical tunability as an opportunity to realize many analog/RF features–in–one nanoscale 3G-RFET.
Authors
- Manish Gupta (ORCID: https://orcid.org/0000-0002-9702-0133)
- Jean‐Pierre Raskin (ORCID: https://orcid.org/0000-0001-9715-9699)
- Abhinav Kranti (ORCID: https://orcid.org/0000-0003-1760-3409)
- Sandeep Semwal (ORCID: https://orcid.org/0000-0003-1182-4737)
- Chinmayi Adoni
Institutions
- Birla Institute of Technology and Science, Pilani - Goa Campus (IN)
- Indian Institute of Technology Indore (IN)
- Birla Institute of Technology and Science, Pilani (IN)
- UCLouvain (BE)
Publication Details
- Journal
- IEEE Journal of the Electron Devices Society
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/jeds.2025.3581677
- Citations
- 1
- Primary Topic
- VLSI and Analog Circuit Testing
- Type
- article
- Field-Weighted Citation Impact
- 2.27