Unveiling Thickness-Dependent Oxidation Effect on Optical Response of Room Temperature RF-Sputtered Nickel Ultrathin Films on Amorphous Glass: An Experimental and FDTD Investigation

Nickel (Ni) ultrathin films exhibit phase-dependent electrical, magnetic, and optical characteristics that are significantly influenced by deposition methods. However, these films are inherently prone to rapid oxidation, with the oxidation rate dependent on substrate, temperature, and deposition parameters. The focus of this research is to investigate the temporal oxidation of RF-sputtered Ni ultrathin films on Corning glass under ambient atmospheric conditions and its impact on their structural, surface, and optical characteristics. Controlled film thicknesses were achieved through precise manipulation of deposition parameters, enabling the analysis of oxidation-induced modifications. Atomic force microscopy (AFM) revealed that films with high structural integrity and surface uniformity are exhibiting roughness values (Rq) from 0.679 to 4.379 nm of corresponding thicknesses ranging from 4 to 85 nm. Scanning electron microscopy (SEM) validated the formation of Ni grains interspersed with NiO phases, facilitating SPR-like effects. UV-visible spectroscopy is demonstrating thickness-dependent spectral (plasmonic peak) shifts. Finite Difference Time Domain (FDTD) simulations corroborate the observed thickness-dependent optical absorbance and the resultant shifts in the absorbance-induced plasmonic peak position and bandgap. Increased NiO presence primarily drives the enhancement of electromagnetic (EM) field localization and the direct impact on power absorption efficiency, which are modulated by the tunability of the plasmonic peak position. Our work demonstrates that controlled fabrication conditions and optimal film thickness selection allow for accurate manipulation of the Ni oxidation process, significantly altering their optical properties. This enables the tailoring of these Ni films for applications in transparent conductive electrodes (TCEs), magneto-optic (MO) devices, spintronics, wear-resistant coatings, microelectronics, and photonics.

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Publication Details

Journal
Materials
Published
2025-06-18
DOI
https://doi.org/10.3390/ma18122891
Citations
2
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
1.46

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article

Unveiling Thickness-Dependent Oxidation Effect on Optical Response of Room Temperature RF-Sputtered Nickel Ultrathin Films on Amorphous Glass: An Experimental and FDTD Investigation

E. Peréz‐Tijerina, S. Shiva Samhitha, Jong‐Ryul Jeong, M. A. Ruiz-Robles et al.
2 citations
Materials
Thin-Film Transistor Technologies
1.46
article

Unveiling Thickness-Dependent Oxidation Effect on Optical Response of Room Temperature RF-Sputtered Nickel Ultrathin Films on Amorphous Glass: An Experimental and FDTD Investigation

E. Peréz‐Tijerina, S. Shiva Samhitha, Jong‐Ryul Jeong, M. A. Ruiz-Robles, Francisco Solís-Pomar, Srivathsava Surabhi, María J. Martínez-Carreón, G. Santhosh, Dylan A. Huerta-Arteaga, A. Martínez-Huerta
article en
2 citations

Abstract

Nickel (Ni) ultrathin films exhibit phase-dependent electrical, magnetic, and optical characteristics that are significantly influenced by deposition methods. However, these films are inherently prone to rapid oxidation, with the oxidation rate dependent on substrate, temperature, and deposition parameters. The focus of this research is to investigate the temporal oxidation of RF-sputtered Ni ultrathin films on Corning glass under ambient atmospheric conditions and its impact on their structural, surface, and optical characteristics. Controlled film thicknesses were achieved through precise manipulation of deposition parameters, enabling the analysis of oxidation-induced modifications. Atomic force microscopy (AFM) revealed that films with high structural integrity and surface uniformity are exhibiting roughness values (Rq) from 0.679 to 4.379 nm of corresponding thicknesses ranging from 4 to 85 nm. Scanning electron microscopy (SEM) validated the formation of Ni grains interspersed with NiO phases, facilitating SPR-like effects. UV-visible spectroscopy is demonstrating thickness-dependent spectral (plasmonic peak) shifts. Finite Difference Time Domain (FDTD) simulations corroborate the observed thickness-dependent optical absorbance and the resultant shifts in the absorbance-induced plasmonic peak position and bandgap. Increased NiO presence primarily drives the enhancement of electromagnetic (EM) field localization and the direct impact on power absorption efficiency, which are modulated by the tunability of the plasmonic peak position. Our work demonstrates that controlled fabrication conditions and optimal film thickness selection allow for accurate manipulation of the Ni oxidation process, significantly altering their optical properties. This enables the tailoring of these Ni films for applications in transparent conductive electrodes (TCEs), magneto-optic (MO) devices, spintronics, wear-resistant coatings, microelectronics, and photonics.

MaterialsVol. 18(12)
Universidad Autónoma de Nuevo León (MX), Chungnam National University (KR), University of Chile (CL)
Consejo Nacional de Ciencia y Tecnología, National Research Foundation of Korea, Agencia Nacional de Investigación y Desarrollo
Affordable and clean energy
Openalex Percentile: Top 17%
Thin-Film Transistor Technologies
1.46
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