Dielectric Properties and Defect Chemistry of Tb/Ho-Co-Doped BaTiO3 Ceramics

Co-doping at Ba and Ti sites with double rare-earth elements has proven an effective strategy for enhancing the dielectric properties of BaTiO₃ ceramics. Among intermediate-sized rare-earth ions, Tb and Ho exhibit amphoteric behavior, occupying both Ba and Ti sites. Investigating the site occupation, defect chemistry, and dielectric effects of Tb and Ho in BaTiO₃ is therefore valuable. In this work, Tb/Ho-co-doped BaTiO₃ ceramics with the composition (Ba_1-<i>x</i>Tb<i>_x</i>)(Ti_1-<i>x</i>Ho<i>_x</i>)O₃ (<i>x</i> = 0.01~0.10) were fabricated at 1400 °C via solid-state reaction, and their solid solubility and crystal structures are confirmed. Microstructure, dielectric properties, photoluminescence, and valence states of samples with a single phase were systematically studied. Both the lattice parameter <i>a</i> and unit cell volume increase with doping level. The ceramic with <i>x</i> = 0.02 meets the X5S dielectric specification. Ho and Tb ions both demonstrate amphoteric site occupancy: Ho exists solely as Ho³⁺ at both Ba and Ti sites, while Tb exhibits mixed valence states as Ba-site Tb³⁺ and Ti-site Tb⁴⁺. As the doping content increases, the concentration of Tb⁴⁺ at Ti sites decreases, and the quantity of Ba-site Ho³⁺ ions initially increases to a maximum before decreasing. Defect compensation mechanisms within the samples are also discussed.