Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering

In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental results show that the optical band gap of the films varies from 2.00 eV to 2.18 eV for the hydrogenated films, whereas the Eg is equal to 1.29 eV when the film does not contain hydrogen atoms and for Ts = 100 °C. The refractive index has been observed to remain stable in the region of 100 °C–220 °C, whereas it drops significantly when the temperature of 290 °C is reached. Additionally, the refractive index exhibits an inverse relationship with Eg as a function of Ts. Notably, these thin films were deposited 12 years ago, and their optical properties have remained stable since then.

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Publication Details

Journal
Electronic Materials
Published
2025-06-18
DOI
https://doi.org/10.3390/electronicmat6020008
Citations
1
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.73
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article

Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering

L. Magafas, Christina Veneti, Panagiota Papadopoulou
1 citations
Electronic Materials
Thin-Film Transistor Technologies
0.73
article

Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering

L. Magafas, Christina Veneti, Panagiota Papadopoulou
article en
1 citations

Abstract

In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental results show that the optical band gap of the films varies from 2.00 eV to 2.18 eV for the hydrogenated films, whereas the Eg is equal to 1.29 eV when the film does not contain hydrogen atoms and for Ts = 100 °C. The refractive index has been observed to remain stable in the region of 100 °C–220 °C, whereas it drops significantly when the temperature of 290 °C is reached. Additionally, the refractive index exhibits an inverse relationship with Eg as a function of Ts. Notably, these thin films were deposited 12 years ago, and their optical properties have remained stable since then.

Electronic MaterialsVol. 6(2)
Democritus University of Thrace (GR), University of Cyprus (CY)
Openalex Percentile: Top 27%
Thin-Film Transistor Technologies
0.73
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Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering — L. Magafas, Christina Veneti, et al. · Electronic Materials (2025) | TGRS Research Map | TGRS