High pressure structural and lattice dynamics study of <i>α</i>-In2Se3

Layered α-In2Se3 has been studied using a combined in situ synchrotron angle-dispersive powder x-ray diffraction and Raman spectroscopy study in a diamond anvil cell up to 60+ GPa, at room temperature. Helium, which remains fairly hydrostatic up to the highest pressure in this study, was used as the pressure-transmitting medium. The results from both experimental methods reveal a pressure-induced structural phase transition from α-In2Se3 to a monoclinic β'-In2Se3 structure at ≈1 GPa, in agreement with previous studies. Based on our detailed measurements using both experimental techniques and the F-f formalism, the β'-In2Se3 structure remains stable up to 45 GPa, without a clear indication of a phase transition toward the previously reported β-In2Se3 phase. Above this pressure, In2Se3 adopts a disordered solid-solution-like orthorhombic structure, phase IV. The results are discussed in comparison with the relevant previous studies of α-In2Se3 under pressure.

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Publication Details

Journal
The Journal of Chemical Physics
Published
2025-06-18
DOI
https://doi.org/10.1063/5.0266372
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73
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High pressure structural and lattice dynamics study of α-In2Se3

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Chalcogenide Semiconductor Thin Films
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article

High pressure structural and lattice dynamics study of α-In2Se3

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article en
1 citations

Abstract

Layered α-In2Se3 has been studied using a combined in situ synchrotron angle-dispersive powder x-ray diffraction and Raman spectroscopy study in a diamond anvil cell up to 60+ GPa, at room temperature. Helium, which remains fairly hydrostatic up to the highest pressure in this study, was used as the pressure-transmitting medium. The results from both experimental methods reveal a pressure-induced structural phase transition from α-In2Se3 to a monoclinic β'-In2Se3 structure at ≈1 GPa, in agreement with previous studies. Based on our detailed measurements using both experimental techniques and the F-f formalism, the β'-In2Se3 structure remains stable up to 45 GPa, without a clear indication of a phase transition toward the previously reported β-In2Se3 phase. Above this pressure, In2Se3 adopts a disordered solid-solution-like orthorhombic structure, phase IV. The results are discussed in comparison with the relevant previous studies of α-In2Se3 under pressure.

The Journal of Chemical PhysicsVol. 162(23)
Lawrence Berkeley National Laboratory (US), Technion – Israel Institute of Technology (IL), Deutsches Elektronen-Synchrotron DESY (DE), Japan Synchrotron Radiation Research Institute (JP)
Openalex Percentile: Top 27%
Chalcogenide Semiconductor Thin Films
0.73
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