High-<b> <i>κ</i> </b> HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device

In this study, a high-κ HfO2/ZrO2 superlattice (SL-HZO) was utilized as the charge-trapping layer to develop a low-temperature polycrystalline silicon (LTPS)/SL-HZO GAAFET hybrid memory while removing the blocking oxide layer. The device was fabricated using green laser crystallization technology and low-temperature microwave annealing, ensuring compatibility with back-end-of-line processes. The LTPS/SL-HZO GAAFET operates at ±4 V/100 ns, achieving 106 cycles with minimal 12.5% memory window degradation and retention exceeding 10 years. Furthermore, the device demonstrates the potential for multi-bit storage and integrated logic operation capabilities. These features underscore its potential for in-memory computing and monolithic 3D integration applications.