DC and RF Analyses of a Novel Z-channel Electron-Hole Bilayer Tunnel Field-Effect Transistor

This paper proposes an electron-hole bilayer tunneling field-effect transistor having a Z-shaped channel and an inverted L-channel gate (Z-EHBTFET), and systematically investigates its performance through numerical simulations. The structure maximizes the line-tunneling area without expanding the device footprint, thereby enhancing the on-state current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>). The introduction of an electron layer significantly increases the electron tunneling rate at the tunneling junction, which not only improves the I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> but also reduces the threshold voltage, achieving high efficiency and low power consumption. Additionally, it elevates the surface potential of the Z-EHBTFET, facilitating the flow of tunneling electrons toward the drain region. Finally, by optimizing parameters, the Z-EHBTFET demonstrates the I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> of 4.11 × 10⁵ A/μm, off-state current of 5.59 × 10⁻¹⁸ A/μm, average subthreshold swing of 29.26 mV/dec, cut-off frequency of 3.42 GHz, and gain bandwidth product of 0.42 GHz.