Development and Prospect of TSV-Based 3D Inductors

On-chip inductors, as crucial passive components, occupy substantial die area in integrated circuits, significantly constraining integration density enhancement. Through-Silicon Via (TSV) technology, a key enabler of three-dimensional (3D) integration, presents an innovative solution to this challenge through TSV-based 3D inductors. This inductor has garnered considerable attention due to their superior inductance density and quality factor. Over the past decade, extensive research efforts have been devoted to their equivalent circuit modeling and derivative structures, yielding substantial advancements. This review comprehensively examines the literature on TSV inductors, with particular emphasis on the progress and challenges in equivalent circuit modeling and structural innovations. Through comparative analysis, the advantages and limitations of various equivalent circuit models and structural configurations are systematically evaluated, followed by insights into future research directions in these domains.