A 900MHz Low Noise Amplifier Design Based Active Inductor

A high linearity pseudo differential low noise amplifier circuit based on an active inductive load with a center operating frequency of 900MHz is designed based on the UMC 28nm CMOS process. The circuit employs a high Q active inductor instead of the traditional passive spiral inductor as the load of the low noise amplifier to realize narrow band operation. The Q value of active inductor achieved 900 based on the rotator with CS-CG. The post simulation is verified by Cadence explore. Using 1.8V supply voltage, the S21 of this LNA is more than 27 dB at the center frequency point of 900MHz, the S12 is less than -67dB, the S11 is less than -35dB, the S22 is less than -60dB, the Kf is 52.5, the NF is about 2.6dB., the P1dB is about -18dBm the layout size is 0.0016mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.