Modeling and Optimization of Near-Field Coupling Between Power Loop and Gate Drive in High-Density Bidirectional Converters

With the advent of wide-bandgap devices, power converters are achieving higher performance switching capabilities. As a result, manufacturers are increasingly focused on reducing the complexity of power converters and enhancing the production and assembly process by transitioning from modular to highly integrated designs, which are high-density bidirectional converters (HDBCs). As a result, near-field (NF) coupling is becoming a concern for stable operation in HDBCs. Optimization for the power loop and gate drive (GD) can be achieved through computational electromagnetics tools and circuit simulators, allowing for a detailed visualization of NF distributions. In addition, the GD impedance can be fine-tuned by optimizing the gate-source trace layout, while near-electric field coupling must be considered when implementing a shielding layer between the GD and high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\text{d}\mathbf {v}/\text{d}\mathbf {t}$</tex-math></inline-formula> nodes. This work presents a workflow for GD and power loop NF coupling modeling and optimization in HDBCs, aimed at mitigating issues such as mistriggering of switching devices and electromagnetic interference concerns in low-voltage systems.