Digital Control Active Gate Driver for WBG Power Semiconductors with Independent Control of Switching Losses and Overshoot

This research puts forward a digital control active gate driver for Wide Band Gap power semiconductors to control switching losses and overshoot independently. The proposed method utilizes an overshoot sampling circuit to measure current and voltage overshoot values in real time. On the basis of these measurements, the switching transient region is divided into regions for controlling switching losses and overshoot to enhance the independence of switching losses and overshoot control. Finally, a prototype experiment was conducted using a 1.7kV/300A SiC MOSFET to validate the feasibility of the proposed active gate driver. Result demonstrates its capability for independent control of overshoot and switching losses.