Design of a Class AB Power Amplifier For 5G Applications

This work discusses the utilization of GaN HEMT technology on Rogers substrate in the design as well as the analysis of a 200 MHz Class AB power amplifier tailored for use in the 5G sub 6 GHz frequency band, specifically targeting 2.4 GHz applications. Matching networks were devised employing cascaded L-section microstrip transmission lines, meticulously optimized for optimum output power, return loss, and PAE. The amplifier’s performance aligned exceptionally well with theoretical predictions. Electromagnetic simulation results showed a small signal gain of 13.634 dB with return losses maintaining below -12 dB across the desired operational bandwidth. Also, a power output of 40.052 dBm for a 29 dBm input power was obtained, coupled with a PAE of 54.148%. This demonstrates the effectiveness of the design approach in producing substantial power with heightened efficiency. Furthermore, the design exhibited enhanced linearity, even in the absence of commonly utilized feedback networks such as voltage dividers or emitter/source degeneration due to the inherent robustness of the proposed design. The meticulous optimization of matching networks and the adept utilization of simulation tools have culminated in a design boasting exceptional output power, efficiency, and linearity, thereby advancing the frontier of amplifier design for next-generation wireless communications.