Insights into the greatly boosted red photoluminescence emission in Ga<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup>/Ti<sup>4+</sup> composite ultrawide bandgap semiconductors
Ti 4+ doping not only increases the emission intensity and purity of emitted red light but also enhances the stability of emission intensity and chromaticity against temperature variation in Ga 2 O 3 :0.035Eu 3+ / y Ti 4+ phosphors.
Authors
- Abbas Nasir
- Muhammad Zakria (ORCID: https://orcid.org/0000-0002-1414-609X)
- Ren‐Kui Zheng (ORCID: https://orcid.org/0000-0002-8897-703X)
- Huan Liu (ORCID: https://orcid.org/0000-0002-0253-647X)
- Mei Chen (ORCID: https://orcid.org/0000-0002-1662-1261)
- Baohua Zhang (ORCID: https://orcid.org/0000-0001-7017-2594)
- Mao Ye (ORCID: https://orcid.org/0000-0002-7078-2402)
- Yuanhang Ren (ORCID: https://orcid.org/0000-0002-3863-299X)
- Shusheng Pan (ORCID: https://orcid.org/0000-0002-4432-001X)
Institutions
- Pakistan Institute of Engineering and Applied Sciences (PK)
- Guangzhou University (CN)
- Department of Education of Guangdong Province (CN)
- Centre of Excellence for Advanced Materials (CN)
- Pakistan Institute of Nuclear Science and Technology (PK)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00643k
- Citations
- 3
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 1.28
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Guangdong Province
- Bureau of Education of Guangzhou Municipality