Correction: Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation
Correction for ‘Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation’ by Wenliang Li et al. , CrystEngComm , 2025, 27 , 3219–3228, https://doi.org/10.1039/D5CE00214A.
Authors
- Baikui Li (ORCID: https://orcid.org/0000-0002-3118-5488)
- Yingmin Wang (ORCID: https://orcid.org/0009-0000-8471-1683)
- W. Li
- Honglei Wu (ORCID: https://orcid.org/0000-0002-8852-3951)
- G. He (ORCID: https://orcid.org/0000-0003-3396-794X)
- Zhenhua Sun (ORCID: https://orcid.org/0000-0002-9227-6738)
- Qian Liu (ORCID: https://orcid.org/0000-0001-8525-7961)
- Jun Tan
Institutions
- Shenzhen University (CN)
- China Electronics Technology Group Corporation (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce90082d
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Science, Technology and Innovation Commission of Shenzhen Municipality
- National Key Research and Development Program of China
- Special Project for Research and Development in Key areas of Guangdong Province