GAN-Based Super-Resolution in Linear R-SAM Imaging for Enhanced Non-Destructive Semiconductor Measurement

The precise identification and non-destructive measurement of structural features and defects in semiconductor wafers are essential for ensuring process integrity and sustaining high yield in advanced manufacturing environments. Unlike conventional measurement techniques, scanning acoustic microscopy (SAM) is an advanced method that provides detailed visualizations of both surface and internal wafer structures. However, in practical industrial applications, the scanning time and image quality of SAM significantly impact its overall performance and utility. Prolonged scanning durations can lead to production bottlenecks, while suboptimal image quality can compromise the accuracy of defect detection. To address these challenges, this study proposes LinearTGAN, an improved generative adversarial network (GAN)-based model specifically designed to improve the resolution of linear acoustic wafer images acquired by the breakthrough rotary scanning acoustic microscopy (R-SAM) system. Empirical evaluations demonstrate that the proposed model significantly outperforms conventional GAN-based approaches, achieving a Peak Signal-to-Noise Ratio (PSNR) of 29.479 dB, a Structural Similarity Index Measure (SSIM) of 0.874, a Learned Perceptual Image Patch Similarity (LPIPS) of 0.095, and a Fréchet Inception Distance (FID) of 0.445. To assess the measurement aspect of LinearTGAN, a lightweight defect segmentation module was integrated and tested on annotated wafer datasets. The super-resolved images produced by LinearTGAN significantly enhanced segmentation accuracy and improved the sensitivity of microcrack detection. Furthermore, the deployment of LinearTGAN within the R-SAM system yielded a 92% improvement in scanning performance for 12-inch wafers while simultaneously enhancing image fidelity. The integration of super-resolution techniques into R-SAM significantly advances the precision, robustness, and efficiency of non-destructive measurements, highlighting their potential to have a transformative impact in semiconductor metrology and quality assurance.