Low Energy Shear Vibrations of Sb<sub>2</sub> Bilayer Driving Ultralow Lattice Thermal Conductivity in Homologous (Sb<sub>2</sub>)<sub>m</sub>(Sb<sub>2</sub>Te<sub>3</sub>)<sub>n</sub>

Abstract Achieving ultralow lattice thermal conductivity (κ L ) in topological quantum materials with understanding of its origin poses a formidable challenge in material design. Members of the (Sb 2 ) m (Sb 2 Te 3 ) n (m, n: integers) homologous series, Sb 2 Te 3 , SbTe, Sb 2 Te, and Sb 4 Te 3 , exhibit natural van der Waals‐like heterostructure and maintain topologically protected surface states. This offers a unique platform for probing the modulation of κ L in conjunction with their local structure and lattice dynamics. We focus on three distinct members, SbTe, Sb 2 Te, and Sb 4 Te 3 , distinguished by different stacking sequences of Sb 2 bilayers (BLs) and Sb 2 Te 3 quintuple layers. Synchrotron X‐ray pair distribution function analysis reveals notable local structural signatures, distinguishing each compound. We observe a systematic κ L reduction across the series along layered stacking direction, with Sb 4 Te 3 exhibiting the lowest κ L (≈0.29 W m −1 K −1 at 300 K) due to enhanced phonon scattering from superlattice‐like heterostructure induced by BLs, while Sb 2 Te 3 having no BL retains the highest κ L (≈0.87 W m −1 K −1 at 300 K). Phonon modes dominated by low‐energy shearing vibrations of Sb 2 BLs couple with acoustic phonons, reducing phonon group velocity and suppressing heat transport. This study underscores the interplay of structural modularity and low‐energy selective lattice vibrations in achieving ultralow κ L in topological quantum materials.

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Journal
Advanced Energy Materials
Published
2025-06-17
DOI
https://doi.org/10.1002/aenm.202500688
Citations
4
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
2.07
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Low Energy Shear Vibrations of Sb2 Bilayer Driving Ultralow Lattice Thermal Conductivity in Homologous (Sb2)m(Sb2Te3)n

Subarna Das, Raju Kumar Biswas, Kanishka Biswas, Anita Gemmy Francis et al.
4 citations
Advanced Energy Materials
Advanced Thermoelectric Materials and Devices
2.07
article

Low Energy Shear Vibrations of Sb2 Bilayer Driving Ultralow Lattice Thermal Conductivity in Homologous (Sb2)m(Sb2Te3)n

Subarna Das, Raju Kumar Biswas, Kanishka Biswas, Anita Gemmy Francis, J. Ghatak, Swapan K. Pati, Anustoop Das, Paribesh Acharyya, Shuva Biswas
article en
4 citations

Abstract

Abstract Achieving ultralow lattice thermal conductivity (κ L ) in topological quantum materials with understanding of its origin poses a formidable challenge in material design. Members of the (Sb 2 ) m (Sb 2 Te 3 ) n (m, n: integers) homologous series, Sb 2 Te 3 , SbTe, Sb 2 Te, and Sb 4 Te 3 , exhibit natural van der Waals‐like heterostructure and maintain topologically protected surface states. This offers a unique platform for probing the modulation of κ L in conjunction with their local structure and lattice dynamics. We focus on three distinct members, SbTe, Sb 2 Te, and Sb 4 Te 3 , distinguished by different stacking sequences of Sb 2 bilayers (BLs) and Sb 2 Te 3 quintuple layers. Synchrotron X‐ray pair distribution function analysis reveals notable local structural signatures, distinguishing each compound. We observe a systematic κ L reduction across the series along layered stacking direction, with Sb 4 Te 3 exhibiting the lowest κ L (≈0.29 W m −1 K −1 at 300 K) due to enhanced phonon scattering from superlattice‐like heterostructure induced by BLs, while Sb 2 Te 3 having no BL retains the highest κ L (≈0.87 W m −1 K −1 at 300 K). Phonon modes dominated by low‐energy shearing vibrations of Sb 2 BLs couple with acoustic phonons, reducing phonon group velocity and suppressing heat transport. This study underscores the interplay of structural modularity and low‐energy selective lattice vibrations in achieving ultralow κ L in topological quantum materials.

Advanced Energy MaterialsVol. 15(33)
Jawaharlal Nehru Centre for Advanced Scientific Research (IN)
Openalex Percentile: Top 13%
Advanced Thermoelectric Materials and Devices
2.07
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