Photonic Crystals Induced Enhancement of Light‐Matter Interactions and Dark Current Suppression for High‐Performance Ga<sub>2</sub>O<sub>3</sub> Solar‐Blind Photodetectors

Abstract Ga 2 O 3 with a wide bandgap has emerged as a natural material system for solar‐blind photodetectors (SBPDs). However, its inherent weak light absorption and high dark current limit its practical application. Photonic crystals hold significant potential for advancing high‐performance optoelectronic devices due to their exceptional ability to harvest light. In this work, a novel photonic crystal nanohole is introduced to enhance light‐matter interactions in Ga 2 O 3 SBPDs. Through comprehensive design, fabrication, and characterization of the nanohole arrays, their effect on light‐matter interactions are demonstrated. The integration of nanohole arrays improves light harvesting by reducing reflectance and transmittance while increasing the local electric field, and it simultaneously reduces the dark current in Ga 2 O 3 photodetectors, resulting in a remarkable photoresponse. The impact of nanohole arrays' geometric features on the device performance is elucidated by precisely engineering its nanohole period, diameter, and depth. The highest responsivity observed across all devices is a record‐high 12474.01 A W −1 . This work provides a comprehensive analysis of the Ga 2 O 3 nanohole arrays, detailing structure design, underlying physical mechanisms, and device performance. It opens new opportunities to develop advanced Ga 2 O 3 ‐based SBPDs with photonic crystals.

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Publication Details

Journal
Laser & Photonics Review
Published
2025-06-07
DOI
https://doi.org/10.1002/lpor.202500064
Citations
1
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.43

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article

Photonic Crystals Induced Enhancement of Light‐Matter Interactions and Dark Current Suppression for High‐Performance Ga2O3 Solar‐Blind Photodetectors

Ziyi Cao, Weihua Tang, Xueqiang Ji, Zeng Liu et al.
1 citations
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Ga2O3 and related materials
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article

Photonic Crystals Induced Enhancement of Light‐Matter Interactions and Dark Current Suppression for High‐Performance Ga2O3 Solar‐Blind Photodetectors

Ziyi Cao, Weihua Tang, Xueqiang Ji, Zeng Liu, Peigang Li, Qi Song, Zheyang Chen, Tianyue Zhang, Jie-Yun Yan, Shan Li, Yupeng Li, Yuanyuan Liu, Xue Liu, Lin Xu
article en
1 citations

Abstract

Abstract Ga 2 O 3 with a wide bandgap has emerged as a natural material system for solar‐blind photodetectors (SBPDs). However, its inherent weak light absorption and high dark current limit its practical application. Photonic crystals hold significant potential for advancing high‐performance optoelectronic devices due to their exceptional ability to harvest light. In this work, a novel photonic crystal nanohole is introduced to enhance light‐matter interactions in Ga 2 O 3 SBPDs. Through comprehensive design, fabrication, and characterization of the nanohole arrays, their effect on light‐matter interactions are demonstrated. The integration of nanohole arrays improves light harvesting by reducing reflectance and transmittance while increasing the local electric field, and it simultaneously reduces the dark current in Ga 2 O 3 photodetectors, resulting in a remarkable photoresponse. The impact of nanohole arrays' geometric features on the device performance is elucidated by precisely engineering its nanohole period, diameter, and depth. The highest responsivity observed across all devices is a record‐high 12474.01 A W −1 . This work provides a comprehensive analysis of the Ga 2 O 3 nanohole arrays, detailing structure design, underlying physical mechanisms, and device performance. It opens new opportunities to develop advanced Ga 2 O 3 ‐based SBPDs with photonic crystals.

Laser & Photonics ReviewVol. 19(20)
Beijing University of Posts and Telecommunications (CN), Anhui University (CN), Chinese Academy of Sciences (CN), Inner Mongolia University (CN), Nanjing University of Posts and Telecommunications (CN), Institute of Semiconductors (CN)
China Scholarship Council, National Key Research and Development Program of China
Openalex Percentile: Top 41%
Ga2O3 and related materials
0.43
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