Devising an advanced WS <sub>2</sub> /a-Ga <sub>2</sub> O <sub>3</sub> photodetector for high-temperature operation
An advanced WS 2 /a-Ga 2 O 3 photodetector is successfully fabricated by using an ultrathin α-Ga 2 O 3 film as the heat insulation layer, which simultaneously exhibits high photoresponsivity and fast response time at high temperature over 155 °C.
Authors
- Baodan Liu (ORCID: https://orcid.org/0000-0001-8141-8940)
- Hao Liu (ORCID: https://orcid.org/0000-0003-3070-0035)
- Jiaming Guo
- Jing Li (ORCID: https://orcid.org/0000-0002-6592-7208)
- Yan Tian (ORCID: https://orcid.org/0000-0002-5967-6887)
- Liu Fei (ORCID: https://orcid.org/0000-0001-7603-9436)
Institutions
- Foshan University (CN)
- Sun Yat-sen University (CN)
- Northeastern University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01338k
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43
Funders
- National Science Foundation
- Northeastern University
- Natural Science Foundation of Guangdong Province
- Guangdong Science and Technology Department
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities