Low Power Approximate Full Adders Using GNRFET

The increasing need for low-power consumption in contemporary digital systems, particularly for energy-sensitive and battery-powered applications, has driven the adoption of approximate computing. This approach permits controlled inaccuracies to achieve reduced power usage, making it highly suitable for domains like machine learning and multimedia processing. Approximate full adders play a key role in this method, offering a balance between accuracy and energy efficiency, making them essential for creating low-power designs. GNRFETs at the 16 nm node have emerged as a promising alternative to CMOS and FinFET technologies, offering advantages such as reduced leakage currents, high carrier mobility, and enhanced electrostatic control, ensuring efficient nanoscale performance. This research introduces a 12T GNRFET-based full adder with an error propagation mechanism, achieving a 49% decrease in static power and significant improvements in power-delay and energy-delay products. Simulation results, obtained using an 8-bit adder optimized through Synopsys HSPICE, demonstrate the potential of GNRFET technology for developing energy-efficient digital circuits.

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Published
2025-04-24
DOI
https://doi.org/10.1109/iccies63851.2025.11032899
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
Field-Weighted Citation Impact
0.73
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Low Power Approximate Full Adders Using GNRFET

P. T. Vanathi, M. Daniel Nareshkumar, J. Ramesh, K. Radhakrishnan
1 citations
Advancements in Semiconductor Devices and Circuit Design
0.73
article

Low Power Approximate Full Adders Using GNRFET

P. T. Vanathi, M. Daniel Nareshkumar, J. Ramesh, K. Radhakrishnan
article en
1 citations

Abstract

The increasing need for low-power consumption in contemporary digital systems, particularly for energy-sensitive and battery-powered applications, has driven the adoption of approximate computing. This approach permits controlled inaccuracies to achieve reduced power usage, making it highly suitable for domains like machine learning and multimedia processing. Approximate full adders play a key role in this method, offering a balance between accuracy and energy efficiency, making them essential for creating low-power designs. GNRFETs at the 16 nm node have emerged as a promising alternative to CMOS and FinFET technologies, offering advantages such as reduced leakage currents, high carrier mobility, and enhanced electrostatic control, ensuring efficient nanoscale performance. This research introduces a 12T GNRFET-based full adder with an error propagation mechanism, achieving a 49% decrease in static power and significant improvements in power-delay and energy-delay products. Simulation results, obtained using an 8-bit adder optimized through Synopsys HSPICE, demonstrate the potential of GNRFET technology for developing energy-efficient digital circuits.

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Advancements in Semiconductor Devices and Circuit Design
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Low Power Approximate Full Adders Using GNRFET — P. T. Vanathi, M. Daniel Nareshkumar, et al. · (2025) | TGRS Research Map | TGRS