Broadband Reconfigurable Amplifying Metasurface for Real-Time Wavefront Control

This article presents a broadband reconfigurable amplifying metasurface (BRAM) capable of real-time spatial electromagnetic (EM) wavefront control. The BRAM comprises elements with two patch-patterned metallic layers and a control network layer, which are elaborately optimized to achieve high efficiency and broadband performance. p-i-n diodes and amplifying circuits, serving as tunable components, are integrated into the metastructure for 1-bit nondispersive phase modulation and continuous reflection intensity control, respectively. By individually controlling the bias voltage applied to the amplifier and the p-i-n diodes in the element, a joint control of amplitude and phase with real-time reconfigurability is achieved. A prototype of the BRAM has been designed, fabricated, and measured, demonstrating a peak power amplification of 10.6 dB and an operational bandwidth from 3.15 to 4.92 GHz (relative bandwidth of 43.8%). Various combinations of phase distribution and tunable reflection amplitude are validated to demonstrate the capability of reconfiguring spatial EM wave intensity and scattering pattern across a wide operational bandwidth.

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Publication Details

Journal
IEEE Transactions on Microwave Theory and Techniques
Published
2025-06-17
DOI
https://doi.org/10.1109/tmtt.2025.3577468
Citations
9
Primary Topic
Optical Wireless Communication Technologies
Type
article
Field-Weighted Citation Impact
6.57

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Broadband Reconfigurable Amplifying Metasurface for Real-Time Wavefront Control

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IEEE Transactions on Microwave Theory and Techniques
Optical Wireless Communication Technologies
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Broadband Reconfigurable Amplifying Metasurface for Real-Time Wavefront Control

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article en
9 citations

Abstract

This article presents a broadband reconfigurable amplifying metasurface (BRAM) capable of real-time spatial electromagnetic (EM) wavefront control. The BRAM comprises elements with two patch-patterned metallic layers and a control network layer, which are elaborately optimized to achieve high efficiency and broadband performance. p-i-n diodes and amplifying circuits, serving as tunable components, are integrated into the metastructure for 1-bit nondispersive phase modulation and continuous reflection intensity control, respectively. By individually controlling the bias voltage applied to the amplifier and the p-i-n diodes in the element, a joint control of amplitude and phase with real-time reconfigurability is achieved. A prototype of the BRAM has been designed, fabricated, and measured, demonstrating a peak power amplification of 10.6 dB and an operational bandwidth from 3.15 to 4.92 GHz (relative bandwidth of 43.8%). Various combinations of phase distribution and tunable reflection amplitude are validated to demonstrate the capability of reconfiguring spatial EM wave intensity and scattering pattern across a wide operational bandwidth.

IEEE Transactions on Microwave Theory and TechniquesVol. 73(10)
Air Force Engineering University (CN), Nanjing University (CN)
National Natural Science Foundation of China, Priority Academic Program Development of Jiangsu Higher Education Institutions, Jiangsu Provincial Key Research and Development Program, Jiangsu Provincial Key Laboratory of Advanced Manipulating Technique of Electromagnetic Wave, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 3%
Optical Wireless Communication Technologies
6.57
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