A Wide Temperature 112-Gbaud PAM4 Operation of Lumped-EML Submodule Using Resistance-Optimized LC Resonance Effect
We present a high-speed (> 70 GHz) lumped-EML submodule whose modulation bandwidth is enhanced by a resistance-optimized LC resonance effect. We perform an equivalent circuit analysis to determine the optimal value of a matching load resistance for 112-Gbaud PAM4 operation over wide temperature range of 25 ∼ 70°C. By fabricating the lumpedEML submodule, we experimentally show that a 3-dB bandwidth of over 70 GHz can be obtained up to 70°C by optimizing the matching load resistance as well as lengths of bondwires, even with a lumped-EML featuring a moderate EAM length of 120 μm. Consequently, the fabricated lumped-EML submodule revealed clear optical eye patterns under 112-Gbaud PAM4 modulation after 2-km SMF transmissions.
Authors
- Yongsoon Baek (ORCID: https://orcid.org/0000-0002-7051-2314)
- Dong-Hyo Lee
- Hoon Kim (ORCID: https://orcid.org/0000-0002-7449-7406)
- Dong-Hoon Lee (ORCID: https://orcid.org/0000-0003-3317-1415)
- Sangho Park (ORCID: https://orcid.org/0000-0002-6046-7425)
- Young-Tak Han (ORCID: https://orcid.org/0000-0003-1132-2913)
- Seok-Jun Yun
- Jang-Uk Shin
Institutions
- Electronics and Telecommunications Research Institute (KR)
- Korea Advanced Institute of Science and Technology (KR)
Publication Details
- Journal
- Journal of Lightwave Technology
- Published
- 2025-06-17
- DOI
- https://doi.org/10.1109/jlt.2025.3580710
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00