A 45-nW 10-b 20-kS/s SAR ADC Based on Single-Capacitor Switching Scheme in 180-nm CMOS

This work presents a 10-bit 20-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) with a proposed single-capacitor switching scheme. Based on behavioral-level simulations and prototype chip testing, ultralow-power operation and significant chip area reduction are achieved. This novel switching scheme employs voltage level shifting instead of charge redistribution for the two most significant bit (MSB) decisions, thus eliminating switching power consumption. For the remaining bit decision, the technique minimizes reference voltage transitions while involving only a single capacitor in each switching. By employing the proposed switching scheme, the capacitance spread of capacitive digital-to-analog converter (CDAC) is reduced from conventional <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2^{n-1}$</tex-math> </inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2^{n-3}$</tex-math> </inline-formula>, which reduces the CDAC area, relaxes capacitor matching requirements, and improves matching linearity. A prototype of the proposed ADC was designed and fabricated in SMIC 180-nm CMOS technology. The chip operates with a 0.6-V supply voltage and consumes 45-nW power at a sampling rate of 20 kS/s. The measurement results also show the signal-to-noise and distortion ratio (SNDR) of 56.4 dB, the spurious-free dynamic range (SFDR) of 70.4 dB, and the ENOB of 9.26 are achieved. The ADC occupies an area of only 0.063 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and attains the Walden figure of merit of 5.06 fJ/conversion-step at the Nyquist rate.

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Publication Details

Journal
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Published
2025-06-17
DOI
https://doi.org/10.1109/tvlsi.2025.3578212
Citations
1
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.67

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article

A 45-nW 10-b 20-kS/s SAR ADC Based on Single-Capacitor Switching Scheme in 180-nm CMOS

Yongzhe Zhang, Peiyuan Wan, Sujuan Liu, Xu Liu et al.
1 citations
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Analog and Mixed-Signal Circuit Design
0.67
article

A 45-nW 10-b 20-kS/s SAR ADC Based on Single-Capacitor Switching Scheme in 180-nm CMOS

Yongzhe Zhang, Peiyuan Wan, Sujuan Liu, Xu Liu, Qinghua Wang, Bingjie Li, Zhijie Chen, Ming Liu, Zihang Zhang, Dezhen Yang
article en
1 citations

Abstract

This work presents a 10-bit 20-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) with a proposed single-capacitor switching scheme. Based on behavioral-level simulations and prototype chip testing, ultralow-power operation and significant chip area reduction are achieved. This novel switching scheme employs voltage level shifting instead of charge redistribution for the two most significant bit (MSB) decisions, thus eliminating switching power consumption. For the remaining bit decision, the technique minimizes reference voltage transitions while involving only a single capacitor in each switching. By employing the proposed switching scheme, the capacitance spread of capacitive digital-to-analog converter (CDAC) is reduced from conventional <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2^{n-1}$</tex-math> </inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2^{n-3}$</tex-math> </inline-formula>, which reduces the CDAC area, relaxes capacitor matching requirements, and improves matching linearity. A prototype of the proposed ADC was designed and fabricated in SMIC 180-nm CMOS technology. The chip operates with a 0.6-V supply voltage and consumes 45-nW power at a sampling rate of 20 kS/s. The measurement results also show the signal-to-noise and distortion ratio (SNDR) of 56.4 dB, the spurious-free dynamic range (SFDR) of 70.4 dB, and the ENOB of 9.26 are achieved. The ADC occupies an area of only 0.063 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and attains the Walden figure of merit of 5.06 fJ/conversion-step at the Nyquist rate.

IEEE Transactions on Very Large Scale Integration (VLSI) SystemsVol. 33(10)
Beijing University of Technology (CN)
National Natural Science Foundation of China, National Key Laboratory Foundation of China
Affordable and clean energy
Openalex Percentile: Top 30%
Analog and Mixed-Signal Circuit Design
0.67
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