Doping-induced magnetic and topological transitions in Mn <sub>2</sub> <i>X</i> <sub>2</sub> Te <sub>5</sub> ( <i>X</i> = Bi, Sb) bilayers

Abstract We investigate the magnetic and topological properties of Mn 2 X 2 Te 5 ( X = Bi, Sb) using first-principles calculations. We find that both Mn 2 Bi 2 Te 5 and Mn 2 Sb 2 Te 5 bilayers exhibit A-type antiferromagnetic order, which can be understood based on the Goodenough–Kanamori–Anderson rules. We further find that an appropriate hole doping can induce a transition from the A-type antiferromagnetic phase to the ferromagnetic phase in these systems, which also experience a transition from a normal insulator to a quantum anomalous Hall phase. Our study thus demonstrates that tunable magnetism and band topology can be achieved in Mn 2 X 2 Te 5 , which may be utilized in the design of new functional electronic devices.

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Publication Details

Journal
Chinese Physics B
Published
2025-06-16
DOI
https://doi.org/10.1088/1674-1056/ade4af
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Doping-induced magnetic and topological transitions in Mn 2 X 2 Te 5 ( X = Bi, Sb) bilayers

Chao-Fei Liu, Chuhan Tang, Wei Chen, Mingxing Chen
4 links
Chinese Physics B
2D Materials and Applications
article

Doping-induced magnetic and topological transitions in Mn 2 X 2 Te 5 ( X = Bi, Sb) bilayers

Chao-Fei Liu, Chuhan Tang, Wei Chen, Mingxing Chen
article en

Abstract

Abstract We investigate the magnetic and topological properties of Mn 2 X 2 Te 5 ( X = Bi, Sb) using first-principles calculations. We find that both Mn 2 Bi 2 Te 5 and Mn 2 Sb 2 Te 5 bilayers exhibit A-type antiferromagnetic order, which can be understood based on the Goodenough–Kanamori–Anderson rules. We further find that an appropriate hole doping can induce a transition from the A-type antiferromagnetic phase to the ferromagnetic phase in these systems, which also experience a transition from a normal insulator to a quantum anomalous Hall phase. Our study thus demonstrates that tunable magnetism and band topology can be achieved in Mn 2 X 2 Te 5 , which may be utilized in the design of new functional electronic devices.

Chinese Physics BVol. 34(9)
Central South University (CN), Hunan Normal University (CN), Quantum Technologies (Sweden) (SE), Jiangxi University of Science and Technology (CN)
Openalex Percentile: Top 90%
2D Materials and Applications
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Doping-induced magnetic and topological transitions in Mn <sub>2</sub> <i>X</i> <sub>2</sub> Te <sub>5</sub> ( <i>X</i> = Bi, Sb) bilayers — Chao-Fei Liu, Chuhan Tang, et al. · Chinese Physics B (2025) | TGRS Research Map | TGRS